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Datasheets for 32S

Datasheets found :: 1249
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |
No. Part Name Description Manufacturer
841 ISD2532S Single-chip voice record/playback device with 32 seconds duration Information Storage Devices
842 ISD2532S SINGLE-CHIP/ MULTIPLE-MESSAGES/ VOICE RECORD/PLAYBACK DEVICE 32-/ 40-/ 48-/ AND 64-SECOND DURATION Winbond Electronics
843 ISD2532SI Single-chip voice record/playback device with 32 seconds duration Information Storage Devices
844 ISTS832S 5V, 50mA transmissive opto-electronic dual channel slotted interrupter switches with transistor sensor ISOCOM
845 ISTS832SD 5V, 50mA transmissive opto-electronic dual channel slotted interrupter switches with transistor sensor ISOCOM
846 ISTS832SS 5V, 50mA transmissive opto-electronic dual channel slotted interrupter switches with transistor sensor ISOCOM
847 JM54AC32SZA-FH Quad 2-Input OR Gate National Semiconductor
848 JM54AC32SZA-FH Quad 2-Input OR Gate National Semiconductor
849 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
850 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
851 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
852 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
853 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
854 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
855 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
856 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
857 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
858 K4R271669B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
859 K4R271669B-N(M)CK7 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
860 K4R271669B-NB(M)CCK8 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
861 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
862 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
863 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
864 K4R271869B-MCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
865 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
866 K4R271869B-MCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
867 K4R271869B-NCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
868 K4R271869B-NCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
869 K4R271869B-NCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
870 K4R441869AM-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic


Datasheets found :: 1249
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |



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