| No. |
Part Name |
Description |
Manufacturer |
| 841 |
BDX54B |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 842 |
BDX54B |
PNP EPITAXIAL SILICON TRANSISTOR |
Wing Shing Computer Components |
| 843 |
BDX54BTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 844 |
BDX54C |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 845 |
BDX54C |
PNP EPITAXIAL SILICON TRANSISTOR |
Wing Shing Computer Components |
| 846 |
BDX54CTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 847 |
BDX54TU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 848 |
BSR16 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 849 |
BU406 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 850 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 851 |
BU406 |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 852 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 853 |
BU406H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 854 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 855 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 856 |
BU406TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 857 |
BU407 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 858 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 859 |
BU407H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 860 |
BU407H |
330 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 861 |
BU407HTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 862 |
BU407TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 863 |
BU408 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 864 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 865 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 866 |
BUT56A |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 867 |
D882SS |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 868 |
D965ASS |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 869 |
D965SS |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 870 |
F606 |
PNP epitaxial silicon transistor, high-current switching application |
SANYO |
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