No. |
Part Name |
Description |
Manufacturer |
841 |
2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
842 |
2N5583 |
Bipolar Transistor |
New Jersey Semiconductor |
843 |
2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS |
SemeLAB |
844 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
845 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
846 |
2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor |
SemeLAB |
847 |
2N5991 |
General Purpose Bipolar Transistor |
New Jersey Semiconductor |
848 |
2N6036 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
849 |
2N6045 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
850 |
2N6107 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
851 |
2N6137 |
Military Planar TO-18 Hermetic |
Unitrode |
852 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
853 |
2N6388 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
854 |
2N6496 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
855 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
856 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
857 |
2N656 |
NPN silicon annular transistor |
Motorola |
858 |
2N657 |
NPN SILICON PLANAR TRANSISTOR |
Continental Device India Limited |
859 |
2N657 |
NPN silicon annular transistor |
Motorola |
860 |
2N696 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
861 |
2N697 |
Silicon N-P-N planar transistor. |
General Electric Solid State |
862 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
863 |
2N697 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
864 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
865 |
2N702 |
NPN silicon annular transistor, TO-18 case |
Motorola |
866 |
2N703 |
NPN silicon annular transistor, TO-18 case |
Motorola |
867 |
2N706 |
Silicon NPN epitaxial planar transistor for high speed switching |
AEG-TELEFUNKEN |
868 |
2N706 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
869 |
2N706A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
870 |
2N708 |
Silicon NPN epitaxial planar transistor for high speed switching and RF circuits |
AEG-TELEFUNKEN |
| | | |