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Datasheets for CC2

Datasheets found :: 2896
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |
No. Part Name Description Manufacturer
841 MAX6737XKWED3-T Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
842 MAX6737XKWGD3-T Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
843 MAX6737XKWID3-T Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
844 MAX6737XKWTD3-T Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
845 MAX6737XKYDD3-T Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
846 MAX6737XKYFD3-T Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
847 MAX6737XKYHD3-T Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
848 MAX6737XKYVD3-T Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
849 MAX6737XKZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
850 MAX6737XKZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
851 MAX6737XKZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
852 MAX6737XKZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
853 MAX6740XKLTD3-T Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
854 MAX6740XKMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
855 MAX6740XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
856 MAX6740XKRDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
857 MAX6740XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
858 MAX6740XKRHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
859 MAX6740XKRVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
860 MAX6740XKRYD3-T Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
861 MAX6740XKSDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
862 MAX6740XKSFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
863 MAX6740XKSHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
864 MAX6740XKSVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
865 MAX6740XKSYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
866 MAX6740XKTED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
867 MAX6740XKTGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
868 MAX6740XKTID3-T Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
869 MAX6740XKTWD3-T Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
870 MAX6740XKTZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 2896
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |



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