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Datasheets for D DA

Datasheets found :: 2764
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |
No. Part Name Description Manufacturer
841 KM416V1004CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
842 KM416V1004CJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
843 KM416V1004CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
844 KM416V1004CJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
845 KM416V1004CJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
846 KM416V1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
847 KM416V1004CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
848 KM416V1004CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
849 KM416V1004CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
850 KM416V1004CT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
851 KM416V1004CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
852 KM416V1004CT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
853 KM416V1004CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
854 KM416V1004CT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
855 KM416V1004CT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
856 KM416V1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
857 KM416V1004CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
858 KM416V1004CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
859 KM416V1204BJ 1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT Samsung Electronic
860 KM416V1204BJ-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
861 KM416V1204BJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
862 KM416V1204BJ-7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
863 KM416V1204BJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
864 KM416V1204BJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
865 KM416V1204BJ-L7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
866 KM416V1204BT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
867 KM416V1204BT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
868 KM416V1204BT-7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
869 KM416V1204BT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
870 KM416V1204BT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic


Datasheets found :: 2764
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |



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