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Datasheets for D FOR

Datasheets found :: 3637
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No. Part Name Description Manufacturer
841 81600M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
842 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
843 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
844 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
845 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
846 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
847 82325-40 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
848 82327-10 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
849 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
850 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
851 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
852 82729-30 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
853 82729-60 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
854 82731-1 Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
855 82731-75 High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
856 82931-55 High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
857 82931-55N High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
858 82931-55S High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
859 83135-3 Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
860 93C86 Note:This product is not recommended for new designs. Please consider 93C86C instead. Microchip
861 93C86-E/P Note:This product is not recommended for new designs. Please consider 93C86C instead. Microchip
862 93C86-E/SN Note:This product is not recommended for new designs. Please consider 93C86C instead. Microchip
863 93C86T-E/SN Note:This product is not recommended for new designs. Please consider 93C86C instead. Microchip
864 94SA High Capacitance, Miniaturized and Well Suited for High-Frequency Switching Power Supplies Vishay
865 94SH Guaranteed Long Life, Used for Industrial Applications Vishay
866 A3213EUA-LC Micropower, ultra-sensitive hall-effect switch. Radial lead form. Allegro MicroSystems
867 A3213LUA-LC Micropower, ultra-sensitive hall-effect switch. Radial lead form. Allegro MicroSystems
868 A3214EUA-LC Micropower, ultra-sensitive hall-effect switch. Radial lead form. Allegro MicroSystems
869 A3214LUA-LC Micropower, ultra-sensitive hall-effect switch. Radial lead form. Allegro MicroSystems
870 A4558 Low Noise Dual OP AMP (The A4558 is a monolithic Integrated Circuit designed for dual operational amplifier.) AUK Corp


Datasheets found :: 3637
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |



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