| No. |
Part Name |
Description |
Manufacturer |
| 841 |
AAY46 |
Germanium point contact diodes quad circuit for ring modulators and rectifiers |
AEG-TELEFUNKEN |
| 842 |
AAZ14 |
Germanium diodes quad in epoxy case for modulators and demodulators as ring circuit |
AEG-TELEFUNKEN |
| 843 |
AB-094 |
TAME PHOTODIODES WITH OP AMP BOOTSTRAP |
Burr Brown |
| 844 |
ACCESSORIES 56233 |
Accessories for power diodes and thyristors |
mble |
| 845 |
ACCESSORIES 56234 |
Accessories for power diodes and thyristors |
mble |
| 846 |
ACCESSORIES 56262A |
Accessories for power diodes and thyristors |
mble |
| 847 |
ACCESSORIES 56264A |
Accessories for power diodes and thyristors |
mble |
| 848 |
ACCESSORIES 56295 |
Accessories for power diodes and thyristors |
mble |
| 849 |
ACCESSORIES 56299 |
Accessories for power diodes and thyristors |
mble |
| 850 |
ACCESSORIES 56309B |
Accessories for power diodes and thyristors |
mble |
| 851 |
ACCESSORIES 56309R |
Accessories for power diodes and thyristors |
mble |
| 852 |
ACDST-70-G |
Switching Diodes Array, VRRM=70V, VR=70V, PD=225mW, IF=200mA |
Comchip Technology |
| 853 |
ACDST-99-G |
Switching Diodes Array, VRRM=70V, VR=70V, PD=225mW, IF=200mA |
Comchip Technology |
| 854 |
ACDST6-4448TI-G |
Switching Diodes Array, VRRM=75V, VR=75V, PD=200mW, IF=100mA |
Comchip Technology |
| 855 |
ACDSV6-4448TI-G |
Switching Diodes Array, VRRM=80V, VR=80V, PD=200mW, IF=100mA |
Comchip Technology |
| 856 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 857 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 858 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 859 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 860 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 861 |
AEY31 |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
| 862 |
AEY31A |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
| 863 |
AG01A |
Ultra-Fast-Recovery Rectifier Diodes (600 to 1000V) |
Sanken |
| 864 |
AHY10A |
Germanium magneto diodes for control applications |
AEG-TELEFUNKEN |
| 865 |
AHY10B |
Germanium magneto diodes for control applications |
AEG-TELEFUNKEN |
| 866 |
AHY10C |
Germanium magneto diodes for control applications |
AEG-TELEFUNKEN |
| 867 |
AHY10D |
Germanium magneto diodes for control applications |
AEG-TELEFUNKEN |
| 868 |
AK06 |
Schottky Barrier Diodes 60V |
Sanken |
| 869 |
AK09 |
Schottky Barrier Diodes 90V |
Sanken |
| 870 |
AP01C |
Ultra-Fast-Recovery Rectifier Diodes (600 to 1000V) |
Sanken |
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