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Datasheets for III

Datasheets found :: 876
Page: | 25 | 26 | 27 | 28 | 29 | 30 |
No. Part Name Description Manufacturer
841 VNL5030JTR-E OMNIFET III: fully protected low-side driver ST Microelectronics
842 VNL5030S5-E OMNIFET III: fully protected low-side driver ST Microelectronics
843 VNL5030S5TR-E OMNIFET III: fully protected low-side driver ST Microelectronics
844 VNL5050N3-E OMNIFET III fully protected low-side driver ST Microelectronics
845 VNL5050N3TR-E OMNIFET III fully protected low-side driver ST Microelectronics
846 VNL5050S5-E OMNIFET III fully protected low-side driver ST Microelectronics
847 VNL5050S5TR-E OMNIFET III fully protected low-side driver ST Microelectronics
848 VNL5090N3-E OMNIFET III: fully protected low-side driver ST Microelectronics
849 VNL5090N3TR-E OMNIFET III: fully protected low-side driver ST Microelectronics
850 VNL5090S5-E OMNIFET III: fully protected low-side driver ST Microelectronics
851 VNL5090S5TR-E OMNIFET III: fully protected low-side driver ST Microelectronics
852 VNL5160N3-E OMNIFET III fully protected low-side driver ST Microelectronics
853 VNL5160N3TR-E OMNIFET III fully protected low-side driver ST Microelectronics
854 VNLD5090-E OMNIFET III: fully protected low-side driver ST Microelectronics
855 VNLD5090TR-E OMNIFET III: fully protected low-side driver ST Microelectronics
856 VNLD5300-E OMNIFET III fully protected low-side driver ST Microelectronics
857 VNLD5300TR-E OMNIFET III fully protected low-side driver ST Microelectronics
858 VTV075 7.5 Watts, 25 Volts, Class A VHF Television - Band III GHz Technology
859 VTV150 15 Watts, 25 Volts VHF Television - Band III GHz Technology
860 VTV300 30 Watts, 25 Volts VHF Television - Band III GHz Technology
861 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
862 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
863 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
864 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
865 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
866 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
867 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
868 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
869 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
870 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 876
Page: | 25 | 26 | 27 | 28 | 29 | 30 |



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