| No. |
Part Name |
Description |
Manufacturer |
| 841 |
FU-641SEA-1M4 |
1.55 um EA MODULATOR INTEGRATED DFB-LD MODULE (7 PIN PACKAGE WITH K CONNECTOR/ 10GB/s DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 842 |
FU-641SEA-1MX |
1.55 um EA MODULATOR INTEGRATED DFB-LD MODULE (7 PIN PACKAGE WITH K CONNECTOR, 10GB/s DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 843 |
FU-641SEA-1MX |
1.55 um EA MODULATOR INTEGRATED DFB-LD MODULE (7 PIN PACKAGE WITH K CONNECTOR, 10GB/s DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 844 |
FVP18030IM3LSG1 |
Sustain PDP SPMTM |
Fairchild Semiconductor |
| 845 |
G5851-103 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 846 |
G5851-11 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 847 |
G5851-13 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 848 |
G5851-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 849 |
G5851-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 850 |
G5851-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 851 |
G5852-103 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 852 |
G5852-11 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 853 |
G5852-13 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 854 |
G5852-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 855 |
G5852-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 856 |
G5852-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 857 |
G5853-103 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 858 |
G5853-11 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 859 |
G5853-13 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 860 |
G5853-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 861 |
G5853-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 862 |
G5853-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 863 |
G6742 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 864 |
G6742-003 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 865 |
G6742-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 866 |
G6849 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 867 |
G6849-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 868 |
G6854-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 869 |
G7150 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 870 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
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