| No. |
Part Name |
Description |
Manufacturer |
| 841 |
1N914B |
Diode Switching 100V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 842 |
1N91A |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 843 |
1N92 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 844 |
1N93 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 845 |
1N94 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 846 |
1N95 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 847 |
1N97 |
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 848 |
1N99A |
Diode Switching 6.5V 0.02A 2-Pin DO-7 |
New Jersey Semiconductor |
| 849 |
1N99B |
Diode Switching 6.5V 0.02A 2-Pin DO-7 |
New Jersey Semiconductor |
| 850 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 851 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 852 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 853 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 854 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 855 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 856 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 857 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 858 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 859 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 860 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 861 |
1SS271 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATION |
TOSHIBA |
| 862 |
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 863 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 864 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 865 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
| 866 |
1SS300 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 867 |
1SS301 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 868 |
1SS302 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 869 |
1SS306 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 870 |
1SS307 |
Diode Silicon Epitaxial Planar Type General Puropose Rectifier Applications |
TOSHIBA |
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