| No. |
Part Name |
Description |
Manufacturer |
| 841 |
BXY44K |
Silicon PIN Diode (Microwave attenuator diode Linear RF characteristic) |
Siemens |
| 842 |
BXY44P |
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches) |
Siemens |
| 843 |
BXY44P-FP |
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches) |
Siemens |
| 844 |
BXY58EA |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 845 |
BXY59D |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 846 |
CASES AND PACKAGES |
Cases for microwave diodes / Gehausebauformen Mikrowellendioden |
Siemens |
| 847 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 848 |
CAY17 |
Microwave mixer diode |
Mullard |
| 849 |
CGY120 |
GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication) |
Siemens |
| 850 |
CGY21 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier) |
Siemens |
| 851 |
CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) |
Siemens |
| 852 |
CGY40 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz) |
Siemens |
| 853 |
CGY50 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 �� gain block) |
Siemens |
| 854 |
CGY52 |
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) |
Siemens |
| 855 |
CGY62 |
GaAs MMIC (Two-stage microwave broadband amplifier IC 50 �� input / output) |
Siemens |
| 856 |
CH |
Thin Film Microwave Resistors |
Vishay |
| 857 |
CHM1191 |
GaAs Monolithic Microwave IC |
United Monolithic Semiconductors |
| 858 |
CHM1191-99F/00 |
GaAs Monolithic Microwave IC |
United Monolithic Semiconductors |
| 859 |
CHR0100A-SJ |
5.8 GHz I/Q mixer. GaAs monolithic microwave IC. |
United Monolithic Semiconductors |
| 860 |
CQP431 |
Dioda elektroluminescencyjna (promieniowanie widzialne) |
Ultra CEMI |
| 861 |
CQP432 |
Dioda elektroluminescencyjna (promieniowanie widzialne) |
Ultra CEMI |
| 862 |
CQP433 |
Dioda elektroluminescencyjna (promieniowanie widzialne) |
Ultra CEMI |
| 863 |
CQP441 |
Dioda elektroluminescencyjna (promieniowanie widzialne) |
Ultra CEMI |
| 864 |
CQP442 |
Dioda elektroluminescencyjna (promieniowanie widzialne) |
Ultra CEMI |
| 865 |
CQP443 |
Dioda elektroluminescencyjna (promieniowanie widzialne) |
Ultra CEMI |
| 866 |
CQP461 |
Dioda elektroluminescencyjna (promieniowanie widzialne) |
Ultra CEMI |
| 867 |
CQP462 |
Dioda elektroluminescencyjna (promieniowanie widzialne) |
Ultra CEMI |
| 868 |
CQP463 |
Dioda elektroluminescencyjna (promieniowanie widzialne) |
Ultra CEMI |
| 869 |
CQWP13 |
Dioda elektroluminescencyjna (promieniowanie podczerwone) |
Ultra CEMI |
| 870 |
CQWP42 |
Dioda elektroluminescencyjna (promieniowanie podczerwone) |
Ultra CEMI |
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