| No. |
Part Name |
Description |
Manufacturer |
| 841 |
2SD1977 |
PNP EPITAXIAL/NPN SILICON TRIPLE DIFUSSED TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER |
Unknow |
| 842 |
2SD1985 |
Silicon NPN triple diffusion planar type(For power amplification) |
Panasonic |
| 843 |
2SD1985A |
Silicon NPN triple diffusion planar type(For power amplification) |
Panasonic |
| 844 |
2SD1994 |
Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency power amplification and drive, Complementary pair with 2SB1322 and 2SB1322A |
Panasonic |
| 845 |
2SD2000 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 846 |
2SD2012 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 847 |
2SD2028 |
NPN Epitaxial Planar Silicon Transistor Low-Frequency Power Amplifier Applications |
SANYO |
| 848 |
2SD2052 |
Silicon NPN triple diffusion planar type(For high power amplification) |
Panasonic |
| 849 |
2SD2053 |
For high power amplification |
Panasonic |
| 850 |
2SD2065 |
For high power amplification |
Panasonic |
| 851 |
2SD2066 |
For high power amplification |
Panasonic |
| 852 |
2SD2088 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 853 |
2SD2102 |
SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMFPLIFIER |
Hitachi Semiconductor |
| 854 |
2SD2108 |
SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 855 |
2SD2130 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 856 |
2SD2137 |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 857 |
2SD2137 |
Silicon NPN triple diffusion planar type(For power amplification) |
Panasonic |
| 858 |
2SD2151 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 859 |
2SD2155 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 860 |
2SD2206 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 861 |
2SD2209 |
For power amplification and switching |
Panasonic |
| 862 |
2SD2217 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
NEC |
| 863 |
2SD2242A |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 864 |
2SD2254 |
Silicon PNP epitaxial planar type Darlington(For power amplification) |
Panasonic |
| 865 |
2SD2254 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 866 |
2SD2255 |
Silicon NPN triple diffusion planar type Darlington For power amplification |
Panasonic |
| 867 |
2SD227 |
Medium Power Amplifiers and Switches |
Unknow |
| 868 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 869 |
2SD2273 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 870 |
2SD234 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB434 |
TOSHIBA |
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