No. |
Part Name |
Description |
Manufacturer |
841 |
MT6L55E |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
842 |
MT6L55S |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
843 |
MT6L56E |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
844 |
MT6L56S |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
845 |
MT6L57AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
846 |
MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
847 |
MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
848 |
MT6L61AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
849 |
MT6L61AT |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
850 |
MT6L62AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
851 |
MT6L62AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
852 |
MT6L62AT |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application |
TOSHIBA |
853 |
MV1804 |
Silicon varactor diode for high-power frecquency multiplication applications |
Motorola |
854 |
MX105A |
Tone Generation - An Application of the MX105A |
CONSUMER MICROCIRCUITS LIMITED |
855 |
MX93032 |
APPLICATION NOTE [M1 VERSION] |
Macronix International |
856 |
MX93032-MI |
APPLICATION NOTE [M1 VERSION] |
Macronix International |
857 |
MX98715BEC |
APPLICATION NOTE |
Macronix International |
858 |
NAV-DS4 |
SH Graphics/Speech Processing Demonstration System NAV-DS4, Application Note |
Hitachi Semiconductor |
859 |
NDL7540PA |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
860 |
NDL7910P |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
861 |
NVP3000 |
ASIC Solution for 1-channel DVR application using HDD |
etc |
862 |
NX7327BF-AA |
1310 nm InGaAsP MQW FP pulsed laser diode for OTDR application (110 mW min). Flat mount flange. |
NEC |
863 |
NX7328BF-AA |
1310 nm InGaAsP MQW FP pulsed laser diode for OTDR application (70 mW min). Flat mount flange. |
NEC |
864 |
NX7329BB-AA |
1310 nm InGaAsP MQW FP pulsed laser diode for OTDR application (25 mW min). Flat mount flange. |
NEC |
865 |
NX7361JB-BC |
1310 nm InGaAsP MQW FP pulsed laser diode for OTDR application (150 mW min). With FC-UPC connector. |
NEC |
866 |
NX7460LE |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
867 |
NX7460LE-BA |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
868 |
NX7460LE-CA |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
869 |
NX7461LE-CC |
1480 nm InGaAsP MQW FP PUMP laser diode module for EDFA application (150 mW min). With SC-UPC connector. |
NEC |
870 |
NX7462LE-CC |
1480 nm InGaAsP MQW FP PUMP laser diode module for EDFA application (120 mW min). With SC-UPC connector. |
NEC |
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