No. |
Part Name |
Description |
Manufacturer |
841 |
FAR-F6CP-1G4410-D207-U |
Piezoelectric SAW BPF (700 to 1700MHz) |
Fujitsu Microelectronics |
842 |
FAR-F6CP-1G4410-D207-V |
Piezoelectric SAW BPF (700 to 1700MHz) |
Fujitsu Microelectronics |
843 |
FAR-F6CP-1G4410-D207-W |
Piezoelectric SAW BPF (700 to 1700MHz) |
Fujitsu Microelectronics |
844 |
FAR-F6CP-1G4890-D208 |
Piezoelectric SAW BPF (700 to 1700MHz) |
Fujitsu Microelectronics |
845 |
FAR-F6CP-1G4890-D208-U |
Piezoelectric SAW BPF (700 to 1700MHz) |
Fujitsu Microelectronics |
846 |
FAR-F6CP-1G4890-D208-V |
Piezoelectric SAW BPF (700 to 1700MHz) |
Fujitsu Microelectronics |
847 |
FAR-F6CP-1G4890-D208-W |
Piezoelectric SAW BPF (700 to 1700MHz) |
Fujitsu Microelectronics |
848 |
GE3009 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
849 |
GE3010 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
850 |
GE3011 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
851 |
GE3012 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
852 |
GE3020 |
PHOTO COUPLED ISOLATOR |
General Electric Solid State |
853 |
GE3021 |
PHOTO COUPLED ISOLATOR |
General Electric Solid State |
854 |
GE3022 |
PHOTO COUPLED ISOLATOR |
General Electric Solid State |
855 |
GE3023 |
PHOTO COUPLED ISOLATOR |
General Electric Solid State |
856 |
GE5062 |
NPN Power Darlington Transistors |
General Electric Solid State |
857 |
GEPS2001 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-transistor. |
General Electric Solid State |
858 |
GES2218 |
Planar epitaxial NPN silicon transistor. 30V, 800mA. |
General Electric Solid State |
859 |
GES2218A |
Planar epitaxial NPN silicon transistor. 40V, 800mA. |
General Electric Solid State |
860 |
GES2219 |
Planar epitaxial NPN silicon transistor. 30V, 800mA. |
General Electric Solid State |
861 |
GES2219A |
Planar epitaxial NPN silicon transistor. 40V, 800mA. |
General Electric Solid State |
862 |
GES2221 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
863 |
GES2221A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
864 |
GES2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
865 |
GES2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
866 |
GES2646 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
867 |
GES2647 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
868 |
GES2904 |
Planar epitaxial PNP silicon transistor. 40V, 600mA. |
General Electric Solid State |
869 |
GES2904A |
Planar epitaxial PNP silicon transistor. 60V, 600mA. |
General Electric Solid State |
870 |
GES2905 |
Planar epitaxial PNP silicon transistor. 40V, 600mA. |
General Electric Solid State |
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