| No. |
Part Name |
Description |
Manufacturer |
| 8521 |
6DI100A-050 |
POWER TRANSISTOR MODULE |
Fuji Electric |
| 8522 |
6DI15A-050 |
POWER TRANSISTOR MODULE |
Fuji Electric |
| 8523 |
6DI15M-120 |
POWER TRANSISTOR MODULE |
Fuji Electric |
| 8524 |
6DI20C-050 |
POWER TRANSISTOR MODULE |
Fuji Electric |
| 8525 |
6DI30A-120 |
POWER TRANSISTOR MODULE |
Fuji Electric |
| 8526 |
6DI50C-050 |
POWER TRANSISTOR MODULE |
Fuji Electric |
| 8527 |
6DI50M-050 |
Power Transistor Module |
Fuji Electric |
| 8528 |
6DI50M-120 |
Power Transistor Module |
Fuji Electric |
| 8529 |
6DI50MA-050 |
Power Transistor Module |
Fuji Electric |
| 8530 |
6NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 8531 |
7NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 8532 |
80064 |
Hermetically sealed NPN power transistor featuring a unique matrix structure |
SGS Thomson Microelectronics |
| 8533 |
80143 |
1 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
| 8534 |
8050 |
NPN EPITAXIAL SILICON PLANAR TRANSISTOR |
Micro Electronics |
| 8535 |
8050SS-C |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 8536 |
8050SS-D |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 8537 |
810BLY/A |
R.F. power transistor |
Mullard |
| 8538 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 8539 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 8540 |
82022-20 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 8541 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 8542 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 8543 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 8544 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 8545 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 8546 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 8547 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 8548 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 8549 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 8550 |
8550 |
PNP EPITAXIAL SILICON PLANAR TRANSISTOR |
Micro Electronics |
| | | |
