| No. |
Part Name |
Description |
Manufacturer |
| 8551 |
NC4D-P-DC6V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
| 8552 |
NC4D-PL2-DC110V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
| 8553 |
NC4D-PL2-DC12V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
| 8554 |
NC4D-PL2-DC24V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
| 8555 |
NC4D-PL2-DC48V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
| 8556 |
NC4D-PL2-DC5V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
| 8557 |
NC4D-PL2-DC6V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
| 8558 |
ND487 |
Quad Schottky Diodes |
California Eastern Laboratories |
| 8559 |
NE021 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
| 8560 |
NE02100 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
| 8561 |
NE02107 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
| 8562 |
NE02107B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
| 8563 |
NE02133-T1B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
| 8564 |
NE02135 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
| 8565 |
NE02139-T1 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
| 8566 |
NE41137 |
N-Channel GaAs Dual Gate MES FET |
California Eastern Laboratories |
| 8567 |
NE650103M |
NECS 10 W L & S-BAND POWER GaAs MESFET |
California Eastern Laboratories |
| 8568 |
NE677M04 |
NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
| 8569 |
NE677M04-T2 |
NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
| 8570 |
NE685M13 |
NECs NPN SILICON TRANSISTOR |
California Eastern Laboratories |
| 8571 |
NE685M13-T3 |
NECs NPN SILICON TRANSISTOR |
California Eastern Laboratories |
| 8572 |
NE696M01 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
California Eastern Laboratories |
| 8573 |
NE851M13 |
NECs NPN SILICON TRANSISTOR |
California Eastern Laboratories |
| 8574 |
NE851M13-T3 |
NECs NPN SILICON TRANSISTOR |
California Eastern Laboratories |
| 8575 |
NIS6111QPT1 |
Better efficiency rectifier system. Ultra efficient, high speed diode. |
ON Semiconductor |
| 8576 |
NL6EBX-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
| 8577 |
NL6EBX-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 8578 |
NL6EBX-L2-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
| 8579 |
NL6EBX-L2-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 8580 |
NR-HL2D-12V |
LONG LIFE RELAY |
Matsushita Electric Works(Nais) |
| | | |
