| No. |
Part Name |
Description |
Manufacturer |
| 8551 |
BD235 |
NPN power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 8552 |
BD236 |
25.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
| 8553 |
BD236 |
PNP power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 8554 |
BD237 |
25.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
| 8555 |
BD237 |
NPN power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 8556 |
BD238 |
25.000W Switching PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
| 8557 |
BD238 |
PNP power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 8558 |
BD241 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242 |
SESCOSEM |
| 8559 |
BD241A |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242A |
SESCOSEM |
| 8560 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 8561 |
BD241B |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242B |
SESCOSEM |
| 8562 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 8563 |
BD241C |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD242C |
SESCOSEM |
| 8564 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 8565 |
BD242 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD241 |
SESCOSEM |
| 8566 |
BD242A |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD241A |
SESCOSEM |
| 8567 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 8568 |
BD242B |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD242B |
SESCOSEM |
| 8569 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 8570 |
BD242C |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD242C |
SESCOSEM |
| 8571 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 8572 |
BD243A |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 8573 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 8574 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 8575 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 8576 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 8577 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 8578 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 8579 |
BD301 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD302 |
SESCOSEM |
| 8580 |
BD302 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD301 |
SESCOSEM |
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