No. |
Part Name |
Description |
Manufacturer |
8581 |
1N5239 |
0.5W SILICON PLANAR ZENER DIODES |
Shanghai Sunrise Electronics |
8582 |
1N5239 |
SILICON PLANAR ZENER DIODES |
Surge Components |
8583 |
1N5239A |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
8584 |
1N5239A |
Diode Zener Single 9.1V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
8585 |
1N5239AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. Tolerance +-10%. |
Microsemi |
8586 |
1N5239AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. Tolerance +-10%. |
Microsemi |
8587 |
1N5239B |
500mw Epitaxial Zener Diode |
Comchip Technology |
8588 |
1N5239B |
9.1V 500 mW Zener Diode |
Continental Device India Limited |
8589 |
1N5239B |
TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES |
DC Components |
8590 |
1N5239B |
1N52 SERIES ZENER DIODES |
Leshan Radio Company |
8591 |
1N5239B |
500 milliwatts glass silicon zener diode, zener voltage 9.1V |
Motorola |
8592 |
1N5239B |
500 milliwatts glass silicon zener diode, zener voltage 9.1V |
Motorola |
8593 |
1N5239B |
Half Watt Zeners |
National Semiconductor |
8594 |
1N5239B |
500mW ZENER DIODE |
NEC |
8595 |
1N5239B |
Diode Zener Single 9.1V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
8596 |
1N5239B |
500mW 5% DO-35 ZENER DIODE |
Rectron Semiconductor |
8597 |
1N5239B |
Silicon Zener Diodes |
Vishay |
8598 |
1N5239BTR |
9.1V, 0.5W Zener Diode |
Fairchild Semiconductor |
8599 |
1N5239BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. Tolerance +-5%. |
Microsemi |
8600 |
1N5239BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. Tolerance +-5%. |
Microsemi |
8601 |
1N5239B_T50A |
9.1V, 0.5W Zener Diode |
Fairchild Semiconductor |
8602 |
1N5239B_T50R |
9.1V, 0.5W Zener Diode |
Fairchild Semiconductor |
8603 |
1N5239C |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
8604 |
1N5239C |
Diode Zener Single 9.1V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
8605 |
1N5239D |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
8606 |
1N5239D |
Diode Zener Single 9.1V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
8607 |
1N5239UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. |
Microsemi |
8608 |
1N5239UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. |
Microsemi |
8609 |
1N5240 |
0.5W SILICON PLANAR ZENER DIODES |
Chenyi Electronics |
8610 |
1N5240 |
500 mW silicon zener diode. Nominal zener voltage 10.0 V. |
Fairchild Semiconductor |
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