| No. |
Part Name |
Description |
Manufacturer |
| 8611 |
HM5165165F |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 8612 |
HM5165165FJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 8613 |
HM5165165FJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 8614 |
HM5165165FLJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 8615 |
HM5165165FLJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 8616 |
HM5165165FLTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 8617 |
HM5165165FLTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 8618 |
HM5165165FTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 8619 |
HM5165165FTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 8620 |
HM5165165J-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 8621 |
HM5165165J-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 8622 |
HM5165165LJ-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 8623 |
HM5165165LJ-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 8624 |
HM5165165LTT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 8625 |
HM5165165LTT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 8626 |
HM5165165TT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 8627 |
HM5165165TT-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 8628 |
HM51S4260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8629 |
HM51S4260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8630 |
HM51S4260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8631 |
HM51S4260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8632 |
HM51S4260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8633 |
HM51S4260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8634 |
HM51S4260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8635 |
HM51S4260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8636 |
HM51S4260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8637 |
HM51S4260ALTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8638 |
HM51S4260ALTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8639 |
HM51S4260ALTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8640 |
HM51S4260ALZ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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