No. |
Part Name |
Description |
Manufacturer |
8641 |
NMC27C64QE200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
8642 |
NMC27C64QM200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
8643 |
NMC27C64QM250 |
250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
8644 |
NMC9306 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
8645 |
NMC9306EM8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
8646 |
NMC9306EN |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
8647 |
NMC9306M8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
8648 |
NMC9306N |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
8649 |
NMC9307 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
8650 |
NMC9307EM |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
8651 |
NMC9307EN |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
8652 |
NMC9307M |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
8653 |
NMC9307N |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
8654 |
NMC9313B |
5V, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
8655 |
NMC9314B |
5V, 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
8656 |
NMC9346 |
1024 Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
8657 |
NMC9346EM8 |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
8658 |
NMC9346EN |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
8659 |
NMC9346MB |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
8660 |
NMC9346N |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
8661 |
NMC93C56 |
Electrically Erasable Programmable Memories |
National Semiconductor |
8662 |
NRF0433 |
Single chip 433MHz RF transceiver |
Nordic VLSI ASA |
8663 |
NRF401 |
433MHz Single chip RF transceiver |
Nordic VLSI ASA |
8664 |
NRF402 |
433MHz Single chip RF transceiver |
Nordic VLSI ASA |
8665 |
NRF902 |
Single chip 868MHz RF transceiver |
Nordic VLSI ASA |
8666 |
NTE2716 |
Integrated Circuit NMOS, 16K UV Erasable PROM |
NTE Electronics |
8667 |
NTE2732A |
Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM |
NTE Electronics |
8668 |
NTE2764 |
Integrated Circuit NMOS, 64K Erasable EPROM, 200ns |
NTE Electronics |
8669 |
OA90 |
Germanium diode |
IPRS Baneasa |
8670 |
OA91 |
Germanium diode |
IPRS Baneasa |
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