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Datasheets for ASA

Datasheets found :: 12314
Page: | 285 | 286 | 287 | 288 | 289 | 290 | 291 | 292 | 293 |
No. Part Name Description Manufacturer
8641 NMC27C64QE200 200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM National Semiconductor
8642 NMC27C64QM200 200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM National Semiconductor
8643 NMC27C64QM250 250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM National Semiconductor
8644 NMC9306 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
8645 NMC9306EM8 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
8646 NMC9306EN 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
8647 NMC9306M8 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
8648 NMC9306N 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
8649 NMC9307 256-Bit Serial Electrically Erasable Programmable Memory National Semiconductor
8650 NMC9307EM Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory National Semiconductor
8651 NMC9307EN Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory National Semiconductor
8652 NMC9307M Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory National Semiconductor
8653 NMC9307N Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory National Semiconductor
8654 NMC9313B 5V, 256-bit serial electrically erasable programmable memory National Semiconductor
8655 NMC9314B 5V, 1024-bit serial electrically erasable programmable memory National Semiconductor
8656 NMC9346 1024 Bit Serial Electrically Erasable Programmable Memory National Semiconductor
8657 NMC9346EM8 +6 to -0.3V; 1024-bit serial electrically erasable programmable memory National Semiconductor
8658 NMC9346EN +6 to -0.3V; 1024-bit serial electrically erasable programmable memory National Semiconductor
8659 NMC9346MB +6 to -0.3V; 1024-bit serial electrically erasable programmable memory National Semiconductor
8660 NMC9346N +6 to -0.3V; 1024-bit serial electrically erasable programmable memory National Semiconductor
8661 NMC93C56 Electrically Erasable Programmable Memories National Semiconductor
8662 NRF0433 Single chip 433MHz RF transceiver Nordic VLSI ASA
8663 NRF401 433MHz Single chip RF transceiver Nordic VLSI ASA
8664 NRF402 433MHz Single chip RF transceiver Nordic VLSI ASA
8665 NRF902 Single chip 868MHz RF transceiver Nordic VLSI ASA
8666 NTE2716 Integrated Circuit NMOS, 16K UV Erasable PROM NTE Electronics
8667 NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM NTE Electronics
8668 NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns NTE Electronics
8669 OA90 Germanium diode IPRS Baneasa
8670 OA91 Germanium diode IPRS Baneasa


Datasheets found :: 12314
Page: | 285 | 286 | 287 | 288 | 289 | 290 | 291 | 292 | 293 |



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