DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for R TRANSISTO

Datasheets found :: 25972
Page: | 287 | 288 | 289 | 290 | 291 | 292 | 293 | 294 | 295 |
No. Part Name Description Manufacturer
8701 ALR006 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
8702 ALR015 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
8703 ALR030 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
8704 ALR060 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
8705 ALR100 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
8706 ALR200 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
8707 ALR325 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
8708 ALZ10 Germanium PNP junction RF power transistor TELEFUNKEN
8709 AM0405-030 Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W SGS Thomson Microelectronics
8710 AM0405-100 Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W SGS Thomson Microelectronics
8711 AM0608-020 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz SGS Thomson Microelectronics
8712 AM0608-070 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics SGS Thomson Microelectronics
8713 AM1214-130 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS SGS Thomson Microelectronics
8714 AM1214-130 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS ST Microelectronics
8715 AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS SGS Thomson Microelectronics
8716 AM82022-020 Common base NPN silicon power transistor for telemetry applications SGS Thomson Microelectronics
8717 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
8718 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
8719 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
8720 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
8721 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
8722 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
8723 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
8724 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
8725 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
8726 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
8727 AN-3565 Application Note - A 100-Watt, 18-kHz Inverter Using RCA-2N5202 Silicon Power Transistor RCA Solid State
8728 AN-3755 UHF Power Generation Using RF Power Transistor - Application Note RCA Solid State
8729 AN-3764 Microwave Amplifiers and Oscillators Using the RCA-2N5470 Power Transistor - Application Note RCA Solid State
8730 AN-4421 16- and 25-Watt Broadband Power Amplifiers Using RCA-2N5918, 2N5919, and 2N6105 UHF/Microwave Power Transistors - Application Note RCA Solid State


Datasheets found :: 25972
Page: | 287 | 288 | 289 | 290 | 291 | 292 | 293 | 294 | 295 |



© 2024 - www Datasheet Catalog com