| No. |
Part Name |
Description |
Manufacturer |
| 871 |
PTVS26VZ1USK |
Transient voltage suppressor in DSN1608-2 for mobile applications |
Nexperia |
| 872 |
PTVS5V0Z1USK |
Transient voltage suppressor in DSN1608-2 for mobile applications |
Nexperia |
| 873 |
PTVS5V0Z1USKN |
Transient voltage suppressor in DSN1608-2 for mobile applications |
Nexperia |
| 874 |
PTVS5V0Z1USKP |
Transient voltage suppressor in DSN1608-2 for mobile applications |
Nexperia |
| 875 |
PTVS7V5Z1USK |
Transient voltage suppressor in DSN1608-2 for mobile applications |
Nexperia |
| 876 |
Q-62702-G66 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB) |
Siemens |
| 877 |
Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
| 878 |
Q62702-A1189 |
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply |
Siemens |
| 879 |
Q62702-F1296 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 880 |
Q62702-F1298 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 881 |
Q62702-F1377 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 882 |
Q62702-F1378 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 883 |
Q62702-F1490 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 884 |
Q62702-F1494 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems |
Siemens |
| 885 |
Q62702-F1500 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 886 |
Q62702-F1504 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 887 |
Q62702-F1531 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 888 |
Q62702-G0071 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB) |
Siemens |
| 889 |
Q62702-G44 |
GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication) |
Siemens |
| 890 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 891 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 892 |
Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
| 893 |
Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 894 |
Q62702-M9 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) |
Siemens |
| 895 |
Q62702G-39 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems) |
Siemens |
| 896 |
RA07H4047M |
400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
Mitsubishi Electric Corporation |
| 897 |
RA07H4047M-01 |
400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
Mitsubishi Electric Corporation |
| 898 |
RA07H4047M-E01 |
400-470MHz 7W 12.5V/ 2 Stage Amp. For PORTABLE/ MOBILE RADIO |
Mitsubishi Electric Corporation |
| 899 |
RA13H4047M |
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
| 900 |
RA13H4047M-01 |
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO |
Mitsubishi Electric Corporation |
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