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Datasheets for N CHAN

Datasheets found :: 1137
Page: | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 | 34 |
No. Part Name Description Manufacturer
871 HN1K04FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
872 HN1K05FU Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications TOSHIBA
873 HN1K06FU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
874 HN4K03JU Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA
875 HSK1118 Silicon N Channel MOS Type Hi-Sincerity Microelectronics
876 HUF75333G3 Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C Fairchild Semiconductor
877 IRF7103PBF-1 50V Dual N Channel HEXFET Power MOSFET in a SO-8 package International Rectifier
878 IRF7103TRPBF-1 50V Dual N Channel HEXFET Power MOSFET in a SO-8 package International Rectifier
879 IRF7335D1PBF 30V Dual N Channel HEXFET Power MOSFET in a SO-14 package International Rectifier
880 IRF7335D1TRPBF 30V Dual N Channel HEXFET Power MOSFET in a SO-14 package International Rectifier
881 IRF7904PBF-1 30V Dual N Channel HEXFET Power MOSFET in a SO-8 package International Rectifier
882 IRF7904TRPBF-1 30V Dual N Channel HEXFET Power MOSFET in a SO-8 package International Rectifier
883 IRF8910PBF-1 20V Dual N Channel HEXFET Power MOSFET in a SO-8 package International Rectifier
884 IRF8910TRPBF-1 20V Dual N Channel HEXFET Power MOSFET in a SO-8 package International Rectifier
885 IRFD213 (IRFD210 - IRFD213) N Channel Power MOSFETs Harris Semiconductor
886 IRFD213 (IRFD210) N Channel Enhancement Mode Transistors Vishay
887 IRFH4257D 25V Dual N Channel HEXFET Power MOSFET in a Dual PQFN 5 x 4 package International Rectifier
888 IRFH4257DTRPBF 25V Dual N Channel HEXFET Power MOSFET in a Dual PQFN 5 x 4 package International Rectifier
889 IRHLUC770Z4 60V 100kRad Hi-Rel Dual N Channel TID hardened MOSFET in a LCC-6 package International Rectifier
890 IRHLUC770Z4SCS 60V 100kRad Hi-Rel Dual N Channel TID hardened MOSFET in a LCC-6 package International Rectifier
891 J2081535_H5N2509P SILICON N CHANNEL MOSFET SWITCHING Hitachi Semiconductor
892 KF5N60I N CHANNEL MOS FIELD N CHANNEL MOS FIELD Korea Electronics (KEC)
893 KTX321U EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR Korea Electronics (KEC)
894 LS-401 LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET Linear Systems
895 LS-402 LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET Linear Systems
896 LS-403 LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET Linear Systems
897 LS-404 LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET Linear Systems
898 LS-405 LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET Linear Systems
899 LS-406 LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET Linear Systems
900 MG100J1ZS40 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA


Datasheets found :: 1137
Page: | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 | 34 |



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