No. |
Part Name |
Description |
Manufacturer |
871 |
HN1K04FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
872 |
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications |
TOSHIBA |
873 |
HN1K06FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
874 |
HN4K03JU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
875 |
HSK1118 |
Silicon N Channel MOS Type |
Hi-Sincerity Microelectronics |
876 |
HUF75333G3 |
Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C |
Fairchild Semiconductor |
877 |
IRF7103PBF-1 |
50V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
878 |
IRF7103TRPBF-1 |
50V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
879 |
IRF7335D1PBF |
30V Dual N Channel HEXFET Power MOSFET in a SO-14 package |
International Rectifier |
880 |
IRF7335D1TRPBF |
30V Dual N Channel HEXFET Power MOSFET in a SO-14 package |
International Rectifier |
881 |
IRF7904PBF-1 |
30V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
882 |
IRF7904TRPBF-1 |
30V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
883 |
IRF8910PBF-1 |
20V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
884 |
IRF8910TRPBF-1 |
20V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
885 |
IRFD213 |
(IRFD210 - IRFD213) N Channel Power MOSFETs |
Harris Semiconductor |
886 |
IRFD213 |
(IRFD210) N Channel Enhancement Mode Transistors |
Vishay |
887 |
IRFH4257D |
25V Dual N Channel HEXFET Power MOSFET in a Dual PQFN 5 x 4 package |
International Rectifier |
888 |
IRFH4257DTRPBF |
25V Dual N Channel HEXFET Power MOSFET in a Dual PQFN 5 x 4 package |
International Rectifier |
889 |
IRHLUC770Z4 |
60V 100kRad Hi-Rel Dual N Channel TID hardened MOSFET in a LCC-6 package |
International Rectifier |
890 |
IRHLUC770Z4SCS |
60V 100kRad Hi-Rel Dual N Channel TID hardened MOSFET in a LCC-6 package |
International Rectifier |
891 |
J2081535_H5N2509P |
SILICON N CHANNEL MOSFET SWITCHING |
Hitachi Semiconductor |
892 |
KF5N60I |
N CHANNEL MOS FIELD N CHANNEL MOS FIELD |
Korea Electronics (KEC) |
893 |
KTX321U |
EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
894 |
LS-401 |
LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET |
Linear Systems |
895 |
LS-402 |
LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET |
Linear Systems |
896 |
LS-403 |
LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET |
Linear Systems |
897 |
LS-404 |
LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET |
Linear Systems |
898 |
LS-405 |
LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET |
Linear Systems |
899 |
LS-406 |
LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET |
Linear Systems |
900 |
MG100J1ZS40 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
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