| No. |
Part Name |
Description |
Manufacturer |
| 871 |
IRF8010L |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 872 |
IRF8010LPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 873 |
IRL2910L |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 874 |
IRL2910LPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 875 |
IS61LV12816-10LQ |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 876 |
IS61LV12816-10LQI |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 877 |
IS61LV12816L-10LQ |
128K x 16 high-speed CMOS static RAM, 3.3V, 10ns |
Integrated Silicon Solution Inc |
| 878 |
IS61LV12816L-10LQI |
128K x 16 high-speed CMOS static RAM, 3.3V, 10ns |
Integrated Silicon Solution Inc |
| 879 |
IS61LV25616-10LQ |
256K x 16 high speed asynchronous CMOS static RAM with 3.3v supply |
Integrated Silicon Solution Inc |
| 880 |
IS61LV25616-10LQI |
256K x 16 high speed asynchronous CMOS static RAM with 3.3v supply |
Integrated Silicon Solution Inc |
| 881 |
IS61LV25616AL-10LQ |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 882 |
IS61LV25616AL-10LQI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 883 |
ISPGAL22V10B-10LJ |
In-System Programmable E2CMOS PLD |
Lattice Semiconductor |
| 884 |
ISPGAL22V10C-10LJ |
In-System Programmable E2CMOS PLD |
Lattice Semiconductor |
| 885 |
ISPGAL22V10C-10LK |
In-System Programmable E2CMOS PLD |
Lattice Semiconductor |
| 886 |
ISPLSI2032E-110LJ44 |
In-System Programmable SuperFAST�� High Density PLD |
Lattice Semiconductor |
| 887 |
ISPLSI2032E-110LJ44 |
In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 888 |
ISPLSI2032E-110LT44 |
In-System Programmable SuperFAST�� High Density PLD |
Lattice Semiconductor |
| 889 |
ISPLSI2032E-110LT44 |
In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 890 |
ISPLSI2032E-110LT48 |
In-System Programmable SuperFAST�� High Density PLD |
Lattice Semiconductor |
| 891 |
ISPLSI2032E-110LT48 |
In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 892 |
ISPLSI2032VE-110LB49 |
3.3V In-System Programmable High Density SuperFAST PLD |
Lattice Semiconductor |
| 893 |
ISPLSI2032VE-110LJ44 |
3.3V In-System Programmable High Density SuperFAST PLD |
Lattice Semiconductor |
| 894 |
ISPLSI2032VE-110LT44 |
3.3V In-System Programmable High Density SuperFAST PLD |
Lattice Semiconductor |
| 895 |
ISPLSI2032VE-110LT48 |
3.3V In-System Programmable High Density SuperFAST PLD |
Lattice Semiconductor |
| 896 |
ISPLSI2032VL-110LB49 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 897 |
ISPLSI2032VL-110LJ44 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 898 |
ISPLSI2032VL-110LT44 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 899 |
ISPLSI2032VL-110LT48 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
| 900 |
ISPLSI5512VA-110LB272 |
110 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
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