| No. |
Part Name |
Description |
Manufacturer |
| 871 |
1S5100A |
Silicon power zener diode 10W 100V, ±5% tolerance |
Texas Instruments |
| 872 |
1S5100C |
Silicon power zener diode 10W 100V, double anode |
Texas Instruments |
| 873 |
1S5100R |
Silicon power zener diode 10W 100V, reverse polarity |
Texas Instruments |
| 874 |
1S5110 |
Silicon power zener diode 10W 110V |
Texas Instruments |
| 875 |
1S5110A |
Silicon power zener diode 10W 110V, ±5% tolerance |
Texas Instruments |
| 876 |
1S5110C |
Silicon power zener diode 10W 110V, double anode |
Texas Instruments |
| 877 |
1S5110R |
Silicon power zener diode 10W 110V, reverse polarity |
Texas Instruments |
| 878 |
1S5120 |
Silicon power zener diode 10W 120V |
Texas Instruments |
| 879 |
1S5120A |
Silicon power zener diode 10W 120V, ±5% tolerance |
Texas Instruments |
| 880 |
1S5120C |
Silicon power zener diode 10W 120V, double anode |
Texas Instruments |
| 881 |
1S5120R |
Silicon power zener diode 10W 120V, reverse polarity |
Texas Instruments |
| 882 |
1S5130 |
Silicon power zener diode 10W 130V |
Texas Instruments |
| 883 |
1S5130A |
Silicon power zener diode 10W 130V, ±5% tolerance |
Texas Instruments |
| 884 |
1S5130C |
Silicon power zener diode 10W 130V, double anode |
Texas Instruments |
| 885 |
1S5130R |
Silicon power zener diode 10W 130V, reverse polarity |
Texas Instruments |
| 886 |
1S5150 |
Silicon power zener diode 10W 150V |
Texas Instruments |
| 887 |
1S5150A |
Silicon power zener diode 10W 150V, ±5% tolerance |
Texas Instruments |
| 888 |
1S5150C |
Silicon power zener diode 10W 150V, double anode |
Texas Instruments |
| 889 |
1S5150R |
Silicon power zener diode 10W 150V, reverse polarity |
Texas Instruments |
| 890 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 891 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 892 |
2N5946 |
NPN silicon RF power transistor 10W - 470MHz |
Motorola |
| 893 |
2N5946 |
450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 894 |
2N6370 |
NPN silicon RF power transistor 10W (PEP) 30MHz |
Motorola |
| 895 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 896 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 897 |
5962-04238 |
10W Total Output Power 28 Vin +3.3 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04238 |
International Rectifier |
| 898 |
5962-04239 |
10W Total Output Power 28 Vin +5 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04239 |
International Rectifier |
| 899 |
5962-04240 |
10W Total Output Power 28 Vin +12 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04240 |
International Rectifier |
| 900 |
5962-04241 |
10W Total Output Power 28 Vin +15 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04241 |
International Rectifier |
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