No. |
Part Name |
Description |
Manufacturer |
871 |
DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
872 |
DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
873 |
DS_K6F4016U6G |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
874 |
DS_K6F8016U6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
875 |
DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
876 |
GLT5160L16-10TC |
100 MHz; 16M (2-bank x 524288-word x 16 bit) synchronous DRAM |
G-LINK Technology |
877 |
GM71C18163AJ-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
878 |
GM71C18163AJ-7 |
1,048,576 words x 16 bit DRAM, 70ns |
LG Semiconductor |
879 |
GM71C18163AJ-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
880 |
GM71C18163AT-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
881 |
GM71C18163AT-7 |
1,048,576 words x 16 bit DRAM, 70ns |
LG Semiconductor |
882 |
GM71C18163AT-8 |
1,048,576 words x 16 bit DRAM, 80ns |
LG Semiconductor |
883 |
GM71C18163C |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
884 |
GM71C18163C-5 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
885 |
GM71C18163C-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
886 |
GM71C18163C-7 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
887 |
GM71C18163CJ-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns |
Hynix Semiconductor |
888 |
GM71C18163CJ-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns |
Hynix Semiconductor |
889 |
GM71C18163CJ-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns |
Hynix Semiconductor |
890 |
GM71C18163CL-5 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
891 |
GM71C18163CL-6 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
892 |
GM71C18163CL-7 |
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
893 |
GM71C18163CT-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns |
Hynix Semiconductor |
894 |
GM71C18163CT-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns |
Hynix Semiconductor |
895 |
GM71C18163CT-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns |
Hynix Semiconductor |
896 |
GM71CS18163ALJ-6 |
1,048,576 words x 16 bit DRAM, 60ns, low power |
LG Semiconductor |
897 |
GM71CS18163ALJ-7 |
1,048,576 words x 16 bit DRAM, 70ns, low power |
LG Semiconductor |
898 |
GM71CS18163ALJ-8 |
1,048,576 words x 16 bit DRAM, 80ns, low power |
LG Semiconductor |
899 |
GM71CS18163ALT-6 |
1,048,576 words x 16 bit DRAM, 60ns, low power |
LG Semiconductor |
900 |
GM71CS18163ALT-7 |
1,048,576 words x 16 bit DRAM, 70ns, low power |
LG Semiconductor |
| | | |