| No. |
Part Name |
Description |
Manufacturer |
| 871 |
HT7136A |
High Voltage Regulator |
Holtek Semiconductor |
| 872 |
HZ36A1 |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
Hitachi Semiconductor |
| 873 |
HZ36A2 |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
Hitachi Semiconductor |
| 874 |
HZ36A3 |
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
Hitachi Semiconductor |
| 875 |
IR3536A |
Dual Loop, 5+1 multiphase VR12/AMD PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
| 876 |
IR3536AMTRPBF |
Dual Loop, 5+1 multiphase VR12/AMD PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
| 877 |
IR3536AMTYPBF |
Dual Loop, 5+1 multiphase VR12/AMD PWM controller for high efficiency, highly accurate VR solutions |
International Rectifier |
| 878 |
IRFG110 |
100V Quad N-Channel MOSFET in a MO-036AB package |
International Rectifier |
| 879 |
IRFG110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 880 |
IRFG5110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 881 |
IRFG5110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 882 |
IRFG5110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 883 |
IRFG5210 |
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 884 |
IRFG5210(N) |
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 885 |
IRFG5210(P) |
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 886 |
IRFG6110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 887 |
IRFG6110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 888 |
IRFG6110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 889 |
IRFG9110 |
100V Quad P-Channel MOSFET in a MO-036AB package |
International Rectifier |
| 890 |
IRFG9110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
| 891 |
IRFPS37N50 |
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) |
International Rectifier |
| 892 |
IRHG3110 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
International Rectifier |
| 893 |
IRHG4110 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
International Rectifier |
| 894 |
IRHG53110 |
100V 300kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
| 895 |
IRHG53110SCS |
100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
| 896 |
IRHG563110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 897 |
IRHG563110(N) |
100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
| 898 |
IRHG563110(P) |
-100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
| 899 |
IRHG567110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 900 |
IRHG567110(N) |
100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
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