No. |
Part Name |
Description |
Manufacturer |
871 |
HY27UF161G2M-VPMP |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
872 |
HY27UF161G2M-VPMS |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
Hynix Semiconductor |
873 |
HY27US561M |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
Hynix Semiconductor |
874 |
HY51V18163HGJ |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
875 |
HY51V18163HGJ-5 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
876 |
HY51V18163HGJ-6 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
877 |
HY51V18163HGJ-7 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
878 |
HY51V18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
879 |
HY51V18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
880 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
881 |
HY51V18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
882 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
883 |
HY51V18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
884 |
HY51V18163HGT |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
885 |
HY51V18163HGT-5 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
886 |
HY51V18163HGT-6 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
887 |
HY51V18163HGT-7 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
888 |
HY51V65163HG |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
889 |
HY51V65163HGJ-45 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
890 |
HY51V65163HGJ-5 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
891 |
HY51V65163HGJ-6 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
892 |
HY51V65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
893 |
HY51V65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
894 |
HY51V65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
895 |
HY51V65163HGLT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
896 |
HY51V65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
897 |
HY51V65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
898 |
HY51V65163HGT-45 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
899 |
HY51V65163HGT-5 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
900 |
HY51V65163HGT-6 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
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