| No. |
Part Name |
Description |
Manufacturer |
| 871 |
1N758B |
10 V, 20 mA, zener diode |
Leshan Radio Company |
| 872 |
1N758C |
10 V, 20 mA, zener diode |
Leshan Radio Company |
| 873 |
1N758D |
10 V, 20 mA, zener diode |
Leshan Radio Company |
| 874 |
1N77A |
Photosensitive Device; VF=10V 10mA, IR(dark)=30uA 50V |
Motorola |
| 875 |
1N77B |
Photosensitive Device; VF=10V 10mA, IR(dark)=30uA 50V |
Motorola |
| 876 |
1N914 |
100V ultra fast recovery rectifier |
MCC |
| 877 |
1N914A |
100V ultra fast recovery rectifier |
MCC |
| 878 |
1N914B |
100V ultra fast recovery rectifier |
MCC |
| 879 |
1N933 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 880 |
1N961 |
Pd=500mW, Vz=10V zener diode |
MCC |
| 881 |
1N961A |
10 V, 12.5 mA, silicon planar zener diode |
Honey Technology |
| 882 |
1N961A |
10 V, zener diode |
Leshan Radio Company |
| 883 |
1N961B |
10 V, 12.5 mA, silicon planar zener diode |
Honey Technology |
| 884 |
1N961BTR |
10V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 885 |
1N961B_T50A |
10V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 886 |
1N985A |
100 V, zener diode |
Leshan Radio Company |
| 887 |
1PMT5925B |
10V 3.2W Zener Diode |
ON Semiconductor |
| 888 |
1PMT5925BT1 |
10V 3.2W Zener Diode |
ON Semiconductor |
| 889 |
1PMT5925BT3 |
10V 3.2W Zener Diode |
ON Semiconductor |
| 890 |
1S262 |
10 Watt reference diode |
TOSHIBA |
| 891 |
1S263 |
10 Watt reference diode |
TOSHIBA |
| 892 |
1S264 |
10 Watt reference diode |
TOSHIBA |
| 893 |
1S265 |
10 Watt reference diode |
TOSHIBA |
| 894 |
1S266 |
10 Watt reference diode |
TOSHIBA |
| 895 |
1S267 |
10 Watt reference diode |
TOSHIBA |
| 896 |
1S268 |
10 Watt reference diode |
TOSHIBA |
| 897 |
1S269 |
10 Watt reference diode |
TOSHIBA |
| 898 |
1S270 |
10 Watt reference diode |
TOSHIBA |
| 899 |
1S271 |
10 Watt reference diode |
TOSHIBA |
| 900 |
1S272 |
10 Watt reference diode |
TOSHIBA |
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