No. |
Part Name |
Description |
Manufacturer |
871 |
IS62LV256-70JI |
70ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
872 |
IS62LV256-70N |
70ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
873 |
IS62LV256-70T |
70ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
874 |
IS62LV256-70TI |
70ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
875 |
IS62LV256-70U |
70ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
876 |
IS62LV256-70UI |
70ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
877 |
IS62LV2568L-70B |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
878 |
IS62LV2568L-70BI |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
879 |
IS62LV2568L-70H |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
880 |
IS62LV2568L-70HI |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
881 |
IS62LV2568L-70T |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
882 |
IS62LV2568L-70TI |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
883 |
ISPLSI5384VA-70LB272I |
70 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
884 |
ISPLSI5512VA-70LB388I |
70 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
885 |
IXFK105N07 |
70V HiPerFET power MOSFET |
IXYS |
886 |
K6F8016V3A-RF70 |
70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
887 |
K6F8016V3A-TF70 |
70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
888 |
K6T1008C2C-DB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
889 |
K6T1008C2C-DL70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
890 |
K6T1008C2C-F |
70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
891 |
K6T1008C2C-GB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
892 |
K6T1008C2C-GL70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
893 |
K6T1008C2C-P |
70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
894 |
K6T1008C2C-RB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
895 |
K6T1008C2C-TB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
896 |
KM4112 |
70uA, Low Cost, +2.7V & +5V, 7.3MHz Rail-to-Rail Amplifier |
Fairchild Semiconductor |
897 |
KM4112IT5TR3 |
70uA, 7.3MHz, RRO Amplifier |
Fairchild Semiconductor |
898 |
KM44C256B-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
899 |
KM44C256C-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
900 |
KM44C256CL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
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