| No. |
Part Name |
Description |
Manufacturer |
| 871 |
5962R9211804VYX |
RadHard enhanced SuMMIT E MIL-STD-1553 dual redundant bus controller/remote terminal monitor: SMD. Device type 04. Class designator V. Lead finish optional. Radiation 1E5(100KRad). |
Aeroflex Circuit Technology |
| 872 |
5Z27 |
ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. |
TOSHIBA |
| 873 |
5Z30 |
ZENER DIODE SILICON DIFFUSED JUNCTION POWER SURGE SUPPRESSOR designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over .voltage conditions. |
TOSHIBA |
| 874 |
630D |
Aluminum Capacitors, + 125°C, Miniature, Axial Lead, Extended Temperature Range, Economical, High reliability design, For timing circuit applications |
Vishay |
| 875 |
724 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 876 |
7343-2USRC |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
| 877 |
7343-S1060 |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
| 878 |
8021 |
8K x 8 Bit RAM |
White Electronic Designs |
| 879 |
80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
| 880 |
8089 |
Digitally Programmed Amplifier |
White Electronic Designs |
| 881 |
81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 882 |
81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 883 |
81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 884 |
81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
| 885 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 886 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 887 |
81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 888 |
81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 889 |
82023-10 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 890 |
82023-16 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 891 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 892 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 893 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 894 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 895 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 896 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 897 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 898 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 899 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 900 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
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