No. |
Part Name |
Description |
Manufacturer |
871 |
28LV256TI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
872 |
28LV256TI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
873 |
28LV256TI-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
874 |
28LV256TM-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
875 |
28LV256TM-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
876 |
28LV256TM-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
877 |
28LV256TM-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
878 |
28LV256TM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
879 |
28LV256TM-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
880 |
28LV256TM-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
881 |
28LV256TM-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
882 |
2N1991 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
883 |
2N2194 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
884 |
2N2218 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
885 |
2N2219 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
886 |
2N2222ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
887 |
2N2222ACSM4 |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
888 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
889 |
2N2222AXCSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
890 |
2N2243A |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
891 |
2N2369A1 |
HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
892 |
2N2369ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
893 |
2N2369ADCSM |
DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
SemeLAB |
894 |
2N2432 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
895 |
2N2453 |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT |
New Jersey Semiconductor |
896 |
2N2453A |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT PACKAGE |
New Jersey Semiconductor |
897 |
2N2484CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
898 |
2N2640 |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT |
New Jersey Semiconductor |
899 |
2N2641 |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT |
New Jersey Semiconductor |
900 |
2N2643 |
DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT |
New Jersey Semiconductor |
| | | |