No. |
Part Name |
Description |
Manufacturer |
871 |
CM600HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
872 |
CM600HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
873 |
CM600HN-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
874 |
CM800DZ-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
875 |
CM800E2Z-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
876 |
CM800HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
877 |
CM800HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
878 |
CM800HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
879 |
CM800HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
880 |
CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
881 |
CM900HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
882 |
CODE |
TYPE designation CODE for silicon power bipolar transistors |
Philips |
883 |
CPH3106 |
Bipolar Transistor, -12V, -3A, Low VCE(sat), PNP Single CPH3 |
ON Semiconductor |
884 |
CPH3121 |
Bipolar Transistor (-12)15V (-)3A VCE(sat);(-165)175mV max. PNP/NPN Single CPH3 |
ON Semiconductor |
885 |
CPH3122 |
Bipolar Transistor, -30V, -3A, Low VCE(sat) PNP Single CPH3 |
ON Semiconductor |
886 |
CPH5504 |
Bipolar Transistor, 50V, 3A, Low VCE(sat) NPN Dual CPH5 |
ON Semiconductor |
887 |
CPH5506 |
Bipolar Transistor, (-)30V, (-)5A, Low VCE(sat) Complementary Dual CPH5 |
ON Semiconductor |
888 |
CPH5517 |
Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat) Complementary Dual CPH5 |
ON Semiconductor |
889 |
CPH5524 |
Bipolar Transistor, (-)50V, (-)6A, Low VCE(sat) Complementary Dual CPH5 |
ON Semiconductor |
890 |
CPH5901 |
N-Channel JFET and NPN Bipolar Transistor, 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5 |
ON Semiconductor |
891 |
CPH5902 |
N-Channel JFET and NPN Bipolar Transistor, 15V, 10 to 32mA, 50V, 150mA, Composite type CPH5 |
ON Semiconductor |
892 |
CPH5905 |
N-Channel JFET and NPN Bipolar Transistor, 15V, 10 to 32mA, 50V, 150mA, Composite type, CPH5 |
ON Semiconductor |
893 |
CPH6121 |
Bipolar Transistor, -12V, -3A, Low VCE(sat), PNP Single CPH6 |
ON Semiconductor |
894 |
CPH6122 |
Bipolar Transistor, -30V, -3A, Low VCE(sat), PNP Single CPH6 |
ON Semiconductor |
895 |
CPH6153 |
Bipolar Transistor, -20V, -3A, Low VCE(sat), PNP Single CPH6 |
ON Semiconductor |
896 |
CPH6501 |
Bipolar Transistor, 30V, 1.5A, Low VCE(sat) NPN Dual CPH6 |
ON Semiconductor |
897 |
CPH6531 |
Bipolar Transistor, -50V, -1A, Low VCE(sat) PNP Dual CPH6 |
ON Semiconductor |
898 |
CPH6532 |
Bipolar Transistor, 50V, 1A, Low VCE(sat) NPN Dual CPH6 |
ON Semiconductor |
899 |
CR02AM-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
900 |
CR02AM-6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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