No. |
Part Name |
Description |
Manufacturer |
871 |
BD550 |
SILICON TRANSISTOR FOR QUASI - COMPLEMENTARY- SYMMETRY AUDIO AMPLIFIERS |
General Electric Solid State |
872 |
BD550B |
SILICON TRANSISTOR FOR QUASI - COMPLEMENTARY- SYMMETRY AUDIO AMPLIFIERS |
General Electric Solid State |
873 |
BD643 |
8 A N-P-N darlington power transistor. 45 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
874 |
BD645 |
8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
875 |
BD647 |
8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
876 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
877 |
BD795 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V, 65W. |
General Electric Solid State |
878 |
BD796 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V, 65W. |
General Electric Solid State |
879 |
BD797 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. |
General Electric Solid State |
880 |
BD798 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. |
General Electric Solid State |
881 |
BD799 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V, 65W. |
General Electric Solid State |
882 |
BD800 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V, 65W. |
General Electric Solid State |
883 |
BD801 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 100V, 65W. |
General Electric Solid State |
884 |
BD802 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -100V, 65W. |
General Electric Solid State |
885 |
BD895 |
8 A N-P-N darlington power transistor. 45 V. 70 W. |
General Electric Solid State |
886 |
BD895A |
8 A N-P-N darlington power transistor. 45 V. 70 W. |
General Electric Solid State |
887 |
BD897 |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
888 |
BD897A |
8 A N-P-N darlington power transistor. 60 V. 70 W. |
General Electric Solid State |
889 |
BD899 |
8 A N-P-N darlington power transistor. 80 V. 70 W. |
General Electric Solid State |
890 |
BD899A |
8 A N-P-N darlington power transistor. 80 V. 70 W. |
General Electric Solid State |
891 |
BD901 |
8 A N-P-N darlington power transistor. 100 V. 70 W. |
General Electric Solid State |
892 |
BDY29 |
HIGH POWER HIGH CURRENT TRANSISTOR |
General Electric Solid State |
893 |
BKC2000 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
894 |
BKC600 |
75 V, 500 mW silicon epitaxial planar diode |
BKC International Electronics |
895 |
BKCRL120 |
20 V, 1 A leadless schottky rectifier diode |
BKC International Electronics |
896 |
BKCRL130 |
30 V, 1 A leadless schottky rectifier diode |
BKC International Electronics |
897 |
BKCRL140 |
40 V, 1 A leadless schottky rectifier diode |
BKC International Electronics |
898 |
BR93LC56 |
2/048-Bit Serial Electrically Erasable PROM |
ROHM |
899 |
BR93LC56F |
2/048-Bit Serial Electrically Erasable PROM |
ROHM |
900 |
BR93LC56FV |
2/048-Bit Serial Electrically Erasable PROM |
ROHM |
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