No. |
Part Name |
Description |
Manufacturer |
871 |
ISPLSI5512VE-100LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
872 |
ISPLSI5512VE-100LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
873 |
ISPLSI5512VE-100LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
874 |
ISPLSI5512VE-100LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
875 |
ISPLSI5512VE-125LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
876 |
ISPLSI5512VE-125LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
877 |
ISPLSI5512VE-125LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
878 |
ISPLSI5512VE-125LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
879 |
ISPLSI5512VE-125LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
880 |
ISPLSI5512VE-125LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
881 |
ISPLSI5512VE-125LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
882 |
ISPLSI5512VE-125LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
883 |
ISPLSI5512VE-155LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
884 |
ISPLSI5512VE-155LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
885 |
ISPLSI5512VE-155LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
886 |
ISPLSI5512VE-155LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
887 |
ISPLSI5512VE-80LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
888 |
ISPLSI5512VE-80LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
889 |
ISPLSI5512VE-80LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
890 |
ISPLSI5512VE-80LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
891 |
ISPLSI81080V |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
892 |
ISPLSI81080V-125LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
893 |
ISPLSI81080V-125LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
894 |
ISPLSI81080V-60LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
895 |
ISPLSI81080V-60LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
896 |
ISPLSI81080V-90LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
897 |
ISPLSI81080V-90LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
898 |
ISPLSI8600V |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
899 |
ISPLSI8600V-125LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
900 |
ISPLSI8600V-125LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
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