| No. |
Part Name |
Description |
Manufacturer |
| 871 |
15KW260A |
260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 872 |
15KW280 |
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 873 |
15KW280A |
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 874 |
15SMC68A |
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
| 875 |
15SMC68CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
| 876 |
16LH |
- Vishay - Motion transducers, Integrated Cylinders |
Vishay |
| 877 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 878 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 879 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 880 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 881 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 882 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 883 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 884 |
181T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 885 |
182T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
| 886 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 887 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 888 |
183T2 |
180V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 889 |
184T2 |
200V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 890 |
184T2 |
Power NPN transistor - High Voltage |
SESCOSEM |
| 891 |
185T2 |
250V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
| 892 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 893 |
1N1816R |
Diffused silicon power zener diodes 10W 13V, reverse polarity (the cathode is on the bolt) |
Texas Instruments |
| 894 |
1N1816RA |
Diffused silicon power zener diodes 10W 13V, reverse polarity (the cathode is on the bolt), ±5% tolerance |
Texas Instruments |
| 895 |
1N1817R |
Diffused silicon power zener diodes 10W 15V, reverse polarity (the cathode is on the bolt) |
Texas Instruments |
| 896 |
1N1817RA |
Diffused silicon power zener diodes 10W 15V, reverse polarity (the cathode is on the bolt), ±5% tolerance |
Texas Instruments |
| 897 |
1N1818R |
Diffused silicon power zener diodes 10W 16V, reverse polarity (the cathode is on the bolt) |
Texas Instruments |
| 898 |
1N1818RA |
Diffused silicon power zener diodes 10W 16V, reverse polarity (the cathode is on the bolt), ±5% tolerance |
Texas Instruments |
| 899 |
1N1819R |
Diffused silicon power zener diodes 10W 18V, reverse polarity (the cathode is on the bolt) |
Texas Instruments |
| 900 |
1N1819RA |
Diffused silicon power zener diodes 10W 18V, reverse polarity (the cathode is on the bolt), ±5% tolerance |
Texas Instruments |
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