No. |
Part Name |
Description |
Manufacturer |
871 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
872 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
873 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
874 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
875 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
876 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
877 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
878 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
879 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
880 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
881 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
882 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
883 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
884 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
885 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
886 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
887 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
888 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
889 |
2N6078 |
NPN MULTI-EPITAXIAL POWER TRANSISTOR |
SemeLAB |
890 |
2N6106 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
891 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
892 |
2N6107 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
893 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
894 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
895 |
2N6108 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
896 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
897 |
2N6109 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
898 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
899 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
900 |
2N6110 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
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