| No. |
Part Name |
Description |
Manufacturer |
| 871 |
ISO176 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 872 |
ISO212P |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 873 |
ISO213 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 874 |
ISO253 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 875 |
ISO254 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 876 |
ISO255 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 877 |
ISO256 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 878 |
ISO806 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 879 |
ISO807 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 880 |
ISO808 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 881 |
ISO809 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 882 |
IT5911 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 883 |
IT5912 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 884 |
ITE4416 |
N-channel JFET. High frequency amplifier. |
Intersil |
| 885 |
IXR100 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 886 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 887 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 888 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 889 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 890 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 891 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 892 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 893 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 894 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 895 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 896 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 897 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 898 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 899 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 900 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
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