| No. |
Part Name |
Description |
Manufacturer |
| 871 |
BU407TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 872 |
BU408 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 873 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 874 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 875 |
BU806 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 876 |
BU806 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 877 |
BU807 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 878 |
BU807 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 879 |
BU807TU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 880 |
BUT56A |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 881 |
BYW51-100 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 100V. |
General Electric Solid State |
| 882 |
BYW51-150 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 150V. |
General Electric Solid State |
| 883 |
BYW51-200 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 200V. |
General Electric Solid State |
| 884 |
C30737 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 885 |
C30737E-230 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 886 |
C30737E-500 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 887 |
C30737P-230 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 888 |
C30737P-500 |
Epitaxial Silicon Avalanche Photodiode |
PerkinElmer Optoelectronics |
| 889 |
CL8050 |
NPN EPITAXIAL SILICON PLANAR TRANSISTOR |
Micro Electronics |
| 890 |
D882SS |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 891 |
D965ASS |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 892 |
D965SS |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 893 |
F606 |
PNP epitaxial silicon transistor, high-current switching application |
SANYO |
| 894 |
FJA3835 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 895 |
FJA3835TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 896 |
FJA4210 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 897 |
FJA4210OTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 898 |
FJA4210RTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 899 |
FJA4210YTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 900 |
FJA4213 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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