| No. |
Part Name |
Description |
Manufacturer |
| 871 |
MPSA28 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 872 |
MPSA29 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 873 |
MPSA62 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 874 |
MPSA63 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 875 |
MPSA64 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 876 |
MPSA66 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 877 |
MPSA75 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 878 |
MPSA76 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 879 |
MPSA77 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 880 |
MPSD04 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 881 |
MPSD54 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
| 882 |
MQ3725 |
Quad NPN silicon annular transistor designed where space reduction is required, TO-86 case |
Motorola |
| 883 |
MQ3762 |
Quad PNP silicon annular transistor designed where space reduction is required, case TO-86 |
Motorola |
| 884 |
MRD300 |
NPN silicon high sensitivity photo transistor designed for application in industrial inspection, processing and control, counters, sorters |
Motorola |
| 885 |
MRFC8003 |
Silicon RF Transistor Dice |
Motorola |
| 886 |
MRFC8004 |
Silicon RF Transistor Dice |
Motorola |
| 887 |
MSC1002M |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 888 |
MSC1002MP |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 889 |
MSC4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 890 |
MSC4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 891 |
MSC80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
| 892 |
MSC81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 893 |
MSC81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 894 |
MSC81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 895 |
MSC81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
| 896 |
MSC81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 897 |
MSC81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 898 |
MSC81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 899 |
MSC81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 900 |
MTB15N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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