No. |
Part Name |
Description |
Manufacturer |
871 |
BC143XUS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
872 |
BC143ZS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
873 |
BC143ZUS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
874 |
BC144ES6R |
Mini size of Discrete semiconductor elements |
SINYORK |
875 |
BC144EUS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
876 |
BC534 |
Medium Power Transistors |
Semiconductor Technology |
877 |
BC556 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
878 |
BC556A |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
879 |
BC556B |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
880 |
BC557 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
881 |
BC557A |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
882 |
BC557B |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
883 |
BC557C |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
884 |
BC558 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
885 |
BC558A |
30 V, PNP silicon planar epitaxial transistor |
Boca Semiconductor Corporation |
886 |
BC558B |
30 V, PNP silicon planar epitaxial transistor |
Boca Semiconductor Corporation |
887 |
BC558C |
30 V, PNP silicon planar epitaxial transistor |
Boca Semiconductor Corporation |
888 |
BCA114ES6R |
Mini size of Discrete semiconductor elements |
SINYORK |
889 |
BCA114EUS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
890 |
BCA124ES6R |
Mini size of Discrete semiconductor elements |
SINYORK |
891 |
BCA124EUS6R |
Mini size of Discrete semiconductor elements |
SINYORK |
892 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
893 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
894 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
895 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
896 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
897 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
898 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
899 |
BCR12CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
900 |
BCR12KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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