No. |
Part Name |
Description |
Manufacturer |
8731 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
8732 |
BD242 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD241 |
SESCOSEM |
8733 |
BD242A |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD241A |
SESCOSEM |
8734 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
8735 |
BD242B |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD242B |
SESCOSEM |
8736 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
8737 |
BD242C |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD242C |
SESCOSEM |
8738 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
8739 |
BD243A |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
8740 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
8741 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
8742 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
8743 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
8744 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
8745 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
8746 |
BD28623MUV |
17W + 17W Class D Speaker Amplifier for Digital Input |
ROHM |
8747 |
BD28623MUV-E2 |
17W + 17W Class D Speaker Amplifier for Digital Input |
ROHM |
8748 |
BD301 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD302 |
SESCOSEM |
8749 |
BD302 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD301 |
SESCOSEM |
8750 |
BD303 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary BD304 |
SESCOSEM |
8751 |
BD304 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary BD303 |
SESCOSEM |
8752 |
BD385 |
DUOWATT package NPN silicon ANNULAR amplifier transistor |
Motorola |
8753 |
BD386 |
DUOWATT package PNP silicon ANNULAR amplifier transistor |
Motorola |
8754 |
BD387 |
DUOWATT package NPN silicon ANNULAR amplifier transistor |
Motorola |
8755 |
BD388 |
DUOWATT package PNP silicon ANNULAR amplifier transistor |
Motorola |
8756 |
BD389 |
DUOWATT package NPN silicon ANNULAR amplifier transistor |
Motorola |
8757 |
BD390 |
DUOWATT package PNP silicon ANNULAR amplifier transistor |
Motorola |
8758 |
BD411 |
NPN silicon darlington amplifier transistor |
Motorola |
8759 |
BD412 |
NPN silicon darlington amplifier transistor |
Motorola |
8760 |
BD413 |
PNP silicon darlington amplifier transistor |
Motorola |
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