| No. |
Part Name |
Description |
Manufacturer |
| 8761 |
MDP82510 |
High performance 16-bit DMA controller with integrated system support peripherals |
Intel |
| 8762 |
MDTL MCE930 SERIES |
Dielectrically isolated integrated circuits, Radiation Hardness, DIONIC Structure, Nichrome Reistors, packaging, etc. |
Motorola |
| 8763 |
MHB208 |
An integrated circuit for a polyphonic keyboard musical instrument |
Tesla Elektronicke |
| 8764 |
MHB9110 |
MIS integrated circuit for telephone dialing |
Tesla Elektronicke |
| 8765 |
MHB9200 |
MIS integrated circuit for telephone dialing |
Tesla Elektronicke |
| 8766 |
MHB9500 |
MIS integrated circuit for telephone dialing |
Tesla Elektronicke |
| 8767 |
MHVIC2114R2 |
2100 MHz, 27 V, 23 dBm Single W–CDMA RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| 8768 |
MHVIC2115R2 |
2.2 GHz, 26 V, 23/34 dBm W–CDMA RF LDMOS Integrated Circuit |
Freescale (Motorola) |
| 8769 |
MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit |
Motorola |
| 8770 |
MHVIC910HR2 |
960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit |
Freescale (Motorola) |
| 8771 |
MHVIC910HR2 |
MHVIC910HR2 960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit |
Motorola |
| 8772 |
MHVIC915 |
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier |
Motorola |
| 8773 |
MHVIC915R2 |
CDMA, GSM/GSM EDGE 746–960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier |
Freescale (Motorola) |
| 8774 |
MHVIC915R2 |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier |
Motorola |
| 8775 |
MHVIC915R2/D |
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier |
Motorola |
| 8776 |
MIC2507 |
Quad Integrated High-Side Switch |
Micrel Semiconductor |
| 8777 |
MIC2507BM |
Quad Integrated High-Side Switch Not Recommended for New Designs |
Micrel Semiconductor |
| 8778 |
MIC2514 |
IttyBittyTM Integrated High-Side Switch |
Micrel Semiconductor |
| 8779 |
MIC2514BM5 |
IttyBitty Integrated High-Side Switch Preliminary Information |
Micrel Semiconductor |
| 8780 |
MIC5312 |
LowQ Mode Dual 300mA LDO with Integrated POR |
Micrel Semiconductor |
| 8781 |
MIC5312-DKBML |
LowQ Mode Dual 300mA LDO with Integrated POR |
Micrel Semiconductor |
| 8782 |
MIC5312-GMBML |
LowQ Mode Dual 300mA LDO with Integrated POR |
Micrel Semiconductor |
| 8783 |
MICREL_KS8695 |
CENTAUR Integrated Multi-Port Gateway Solutions |
Micrel Semiconductor |
| 8784 |
MIG20J806HA |
Silicon N-channel integrated IGBT module for high power switching, motor control applications |
TOSHIBA |
| 8785 |
MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 8786 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 8787 |
MJE18002D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 8788 |
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS |
ON Semiconductor |
| 8789 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 8790 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
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