| No. |
Part Name |
Description |
Manufacturer |
| 8761 |
BF506 |
Epitaxial planar PNP transistor, it is intended for use as mixer and oscillator in the VHF range |
SGS-ATES |
| 8762 |
BF620 |
SMALL SIGNAL NPN TRANSISTOR |
SGS Thomson Microelectronics |
| 8763 |
BF621 |
SMALL SIGNAL PNP TRANSISTOR |
SGS Thomson Microelectronics |
| 8764 |
BF679M |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz, low thermal drift |
SGS-ATES |
| 8765 |
BF720 |
SMALL SIGNAL NPN TRANSISTOR |
SGS Thomson Microelectronics |
| 8766 |
BF721 |
SMALL SIGNAL PNP TRANSISTOR |
SGS Thomson Microelectronics |
| 8767 |
BFP405F |
RF-Bipolar - NPN Silicon RF transistor for low current applications in NEW thin small flatlead package TSFP-4 |
Infineon |
| 8768 |
BFP420F |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
| 8769 |
BFP520F |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
| 8770 |
BFP540F |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain LNA in NEW thin small flatlead package TSFP-4 |
Infineon |
| 8771 |
BFQ65 |
NPN microwave NPN transistor, designed for use in the GHz range, very low noise |
Philips |
| 8772 |
BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications) |
Siemens |
| 8773 |
BFS55 |
NPN transistor for RF applications up to the GHz range |
Siemens |
| 8774 |
BFW16A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 8775 |
BFW16A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 8776 |
BFW17 |
Silicon NPN epitaxial planar RF transistor of the multi-emitter design |
ICCE |
| 8777 |
BFW17A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 8778 |
BFW17A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
| 8779 |
BFW43 |
HIGH VOLTAGE AMPLIFIER |
SGS Thomson Microelectronics |
| 8780 |
BFW45 |
NPN silicon transistor intended for the output stage of the horizontal deflection amplifier |
ICCE |
| 8781 |
BFW45 |
NPN silicon transistor intended for the output stage of the horizontal deflection amplifier |
ICCE |
| 8782 |
BFW92 |
Silicon NPN planar epitaxial transistor for RF amplifiers up to the GHz range |
VALVO |
| 8783 |
BFW92A |
Silicon planar epitaxial NPN transistor intended for use in amplifiers in the 40-860MHz range |
Philips |
| 8784 |
BFX34 |
SILICON NPN TRANSISTOR |
SGS Thomson Microelectronics |
| 8785 |
BFX73-2N918 |
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS |
SGS Thomson Microelectronics |
| 8786 |
BFY50 |
MEDIUM POWER AMPLIFIER |
SGS Thomson Microelectronics |
| 8787 |
BFY50 |
MEDIUM POWER AMPLIFIERS |
SGS Thomson Microelectronics |
| 8788 |
BFY51 |
MEDIUM POWER AMPLIFIERS |
SGS Thomson Microelectronics |
| 8789 |
BFY90 |
Silicon NPN planar epitaxial transistor for RF amplifiers up to the GHz range |
VALVO |
| 8790 |
BGY12 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
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