No. |
Part Name |
Description |
Manufacturer |
8761 |
HM4-6514-B |
1024 x 4 CMOS RAM |
Intersil |
8762 |
HM4334-3 |
1024-word x 4-bit Static CMOS RAM |
Hitachi Semiconductor |
8763 |
HM4334-4 |
1024-word x 4-bit Static CMOS RAM |
Hitachi Semiconductor |
8764 |
HM4334P-3 |
1024-word x 4-bit Static CMOS RAM |
Hitachi Semiconductor |
8765 |
HM4334P-3L |
1024-word x 4-bit Static CMOS RAM |
Hitachi Semiconductor |
8766 |
HM4334P-4 |
1024-word x 4-bit Static CMOS RAM |
Hitachi Semiconductor |
8767 |
HM4334P-4L |
1024-word x 4-bit Static CMOS RAM |
Hitachi Semiconductor |
8768 |
HM472114-3 |
1024-word x 4-bit Static Random Access Memory |
Hitachi Semiconductor |
8769 |
HM472114-4 |
1024-word x 4-bit Static Random Access Memory |
Hitachi Semiconductor |
8770 |
HM472114A-1 |
1024-word x 4-bit Static Random Access Memory |
Hitachi Semiconductor |
8771 |
HM472114A-2 |
1024-word x 4-bit Static Random Access Memory |
Hitachi Semiconductor |
8772 |
HM472114AP-1 |
1024-word x 4-bit Static Random Access Memory |
Hitachi Semiconductor |
8773 |
HM472114AP-2 |
1024-word x 4-bit Static Random Access Memory |
Hitachi Semiconductor |
8774 |
HM472114P-3 |
1024-word x 4-bit Static Random Access Memory |
Hitachi Semiconductor |
8775 |
HM472114P-4 |
1024-word x 4-bit Static Random Access Memory |
Hitachi Semiconductor |
8776 |
HM514258AJP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
8777 |
HM514258AP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
8778 |
HM514258AZP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
8779 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8780 |
HM514260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8781 |
HM514260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8782 |
HM514260ALTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8783 |
HM514260ALZ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8784 |
HM514260ARR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8785 |
HM514260ATT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8786 |
HM514260AZ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8787 |
HM514260JP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8788 |
HM514260LJP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8789 |
HM514260LTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
8790 |
HM514260LZP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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