No. |
Part Name |
Description |
Manufacturer |
8761 |
Q60218-Y63 |
NPN TRANSISTORS FOR SWITCHING APPLICATIONS |
Siemens |
8762 |
Q60702-S111 |
PNP SILICON PLANAR TRANSISTORS |
Siemens |
8763 |
Q610 |
Transistor |
Siemens |
8764 |
Q62607-S60 |
Silizium-Fotoelement Silicon Photovoltaic Cell |
Siemens |
8765 |
Q62607-S61 |
Silizium-Fotoelement Silicon Photovoltaic Cell |
Siemens |
8766 |
Q627002G0078 |
GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) |
Siemens |
8767 |
Q62701-F51 |
PNP GERMANIUM RF TRANSISTOR |
Siemens |
8768 |
Q62701-F72 |
PNP GERMANIUM RF TRANSISTOR |
Siemens |
8769 |
Q62701-F88 |
PNP GERMANIUM RHF TRANSISTOR |
Siemens |
8770 |
Q62701-F92 |
PNP GERMANIUM UHF TRANSISTOR |
Siemens |
8771 |
Q62702-A0042 |
Silicon Crossover Ring Quad Schottky Diode |
Siemens |
8772 |
Q62702-A0043 |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
8773 |
Q62702-A0062 |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
Siemens |
8774 |
Q62702-A0960 |
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
8775 |
Q62702-A1004 |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
Siemens |
8776 |
Q62702-A1006 |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
8777 |
Q62702-A1010 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
8778 |
Q62702-A1017 |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
Siemens |
8779 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
8780 |
Q62702-A1028 |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
Siemens |
8781 |
Q62702-A1028 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
8782 |
Q62702-A1030 |
Silicon Switching Diode Array (For high speed switching applications Common cathode) |
Siemens |
8783 |
Q62702-A1031 |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
Siemens |
8784 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
8785 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
8786 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
8787 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
8788 |
Q62702-A1041 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
8789 |
Q62702-A1042 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
8790 |
Q62702-A1043 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
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