| No. |
Part Name |
Description |
Manufacturer |
| 8791 |
BCP29 |
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) |
Siemens |
| 8792 |
BCP48 |
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) |
Siemens |
| 8793 |
BCP49 |
NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) |
Siemens |
| 8794 |
BCP68 |
NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 8795 |
BCP68-10 |
NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 8796 |
BCP68-16 |
NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 8797 |
BCP68-25 |
NPN Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 8798 |
BCP69 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 8799 |
BCP69-10 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 8800 |
BCP69-16 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 8801 |
BCP69-25 |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
Siemens |
| 8802 |
BCP72 |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain) |
Siemens |
| 8803 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8804 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8805 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8806 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8807 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8808 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8809 |
BCR12CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8810 |
BCR12CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8811 |
BCR12CS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8812 |
BCR12CS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8813 |
BCR12PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8814 |
BCR12PM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8815 |
BCR12PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8816 |
BCR16CM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8817 |
BCR16CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8818 |
BCR16PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8819 |
BCR16PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8820 |
BCR1AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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