| No. |
Part Name |
Description |
Manufacturer |
| 8791 |
2SC1953 |
Power Device - Power Transistors - Others |
Panasonic |
| 8792 |
2SC1953 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 8793 |
2SC1955 |
Silicon NPN epitaxial planar VHF band power transistor |
TOSHIBA |
| 8794 |
2SC1957 |
NPN Silicon Power Transistor |
NEC |
| 8795 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 8796 |
2SC1965 |
NPN epitaxial planar RF power VHF transistor 6W 13.5V |
Mitsubishi Electric Corporation |
| 8797 |
2SC1966 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8798 |
2SC1967 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8799 |
2SC1968 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8800 |
2SC1968A |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8801 |
2SC1969 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8802 |
2SC1970 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8803 |
2SC1971 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 8804 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 8805 |
2SC1985 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 8806 |
2SC1986 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 8807 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
| 8808 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 8809 |
2SC2020 |
RP POWER TRANSISTOR |
SONY |
| 8810 |
2SC2022 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 8811 |
2SC2023 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 8812 |
2SC2025 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC2025, see the Electrical Characteristics table) |
NEC |
| 8813 |
2SC2027 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 8814 |
2SC2053 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 8815 |
2SC2055 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 8816 |
2SC2056 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 8817 |
2SC2060 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 8818 |
2SC2061 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 8819 |
2SC2073 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 8820 |
2SC2073 |
Silicon NPN triple diffused power transistor, power amplifier, vertical output applications |
TOSHIBA |
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