| No. |
Part Name |
Description |
Manufacturer |
| 8821 |
NIF62514-D |
HDPlus N-Channel Self-protected Field Effect Transistors w/ Temperature and Current Limit |
ON Semiconductor |
| 8822 |
NJM2146 |
VOLTAGE AND CURRENT CONTROL IC |
New Japan Radio |
| 8823 |
NJM2146B |
Voltage And Current Control IC |
New Japan Radio |
| 8824 |
NJM2146BD |
VOLTAGE AND CURRENT CONTROL IC |
New Japan Radio |
| 8825 |
NJM2146BM |
VOLTAGE AND CURRENT CONTROL IC |
New Japan Radio |
| 8826 |
NJM2146BR |
VOLTAGE AND CURRENT CONTROL IC |
New Japan Radio |
| 8827 |
NJM2147 |
Dual High Voltage and Low Power Operational Amplifier |
New Japan Radio |
| 8828 |
NJM2147D |
DUAL HIGH VOLTAGE AND LOW POWER OPERATIONAL AMPLIFIER IC |
New Japan Radio |
| 8829 |
NJM2147M |
DUAL HIGH VOLTAGE AND LOW POWER OPERATIONAL AMPLIFIER IC |
New Japan Radio |
| 8830 |
NJM2346 |
VOLTAGE AND CURRENT CONTROL IC |
New Japan Radio |
| 8831 |
NJM2346M |
VOLTAGE AND CURRENT CONTROL IC |
New Japan Radio |
| 8832 |
NJM2346RB1 |
VOLTAGE AND CURRENT CONTROL IC |
New Japan Radio |
| 8833 |
NJU7304 |
8-CHANNEL MULTIPLEXER WITH SAMPLE AND HOLD |
New Japan Radio |
| 8834 |
NJU7304D |
8-CHANNEL MULTIPLEXER WITH SAMPLE AND HOLD |
New Japan Radio |
| 8835 |
NOA1305 |
Ambient Light Sensor with I2C Interface and Dark Current Sensor |
ON Semiconductor |
| 8836 |
NSTB60 |
PNP General Purpose and NPN Bias Resistor Transistor Combination |
ON Semiconductor |
| 8837 |
NSTB60ADW1T1 |
PNP General Purpose and NPN Bias Resistor Transistor Combination |
ON Semiconductor |
| 8838 |
NSTB60ADW1T1-D |
PNP General Purpose and NPN Bias Resistor Transistor Combination |
ON Semiconductor |
| 8839 |
NSTB60BDW1T1 |
PNP General Purpose and NPN Bias Resistor Transistor Combination |
ON Semiconductor |
| 8840 |
NSTB60BDW1T1-D |
PNP General Purpose and NPN Bias Resistor Transistor Combination |
ON Semiconductor |
| 8841 |
NTE1104 |
Integrated Circuit Wide and Narrow Band Amp, FM/IF Limiter |
NTE Electronics |
| 8842 |
NTE1416 |
Integrated Circuit Chrominance and Luminance Processor for NTSC Color TV |
NTE Electronics |
| 8843 |
NTE2072 |
Integrated Circuit Transistor Array w/Clamp Diode and Strobe |
NTE Electronics |
| 8844 |
NTE2073 |
Integrated Circuit Transistor Array w/Clamp Diode and Strobe |
NTE Electronics |
| 8845 |
NTE5412 |
Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 60V. |
NTE Electronics |
| 8846 |
NTE5413 |
Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 100V. |
NTE Electronics |
| 8847 |
NTE5414 |
Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 200V. |
NTE Electronics |
| 8848 |
NTE5415 |
Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 400V. |
NTE Electronics |
| 8849 |
NTE5471 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 100V. Forward current RMS Itrms = 8A. |
NTE Electronics |
| 8850 |
NTE5472 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 200V. Forward current RMS Itrms = 8A. |
NTE Electronics |
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