No. |
Part Name |
Description |
Manufacturer |
8821 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
8822 |
2N6740 |
POWER TRANSISTORS(8.0A,100W) |
MOSPEC Semiconductor |
8823 |
2N6740 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
8824 |
2N6751 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
8825 |
2N6751 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
8826 |
2N6752 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
8827 |
2N6752 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
8828 |
2N6753 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
8829 |
2N6753 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
8830 |
2N6754 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
8831 |
2N6754 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
8832 |
2N6755 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
8833 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
8834 |
2N6756 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
8835 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
8836 |
2N6756 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
8837 |
2N6757 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
8838 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
8839 |
2N6758 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
8840 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
8841 |
2N6758 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
8842 |
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
8843 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
8844 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
8845 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
8846 |
2N6760 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
8847 |
2N6761 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
8848 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
8849 |
2N6762 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
8850 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| | | |