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Datasheets for POWER

Datasheets found :: 253594
Page: | 291 | 292 | 293 | 294 | 295 | 296 | 297 | 298 | 299 |
No. Part Name Description Manufacturer
8821 2N6740 100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. Continental Device India Limited
8822 2N6740 POWER TRANSISTORS(8.0A,100W) MOSPEC Semiconductor
8823 2N6740 Silicon NPN Power Transistors TO-220 package Savantic
8824 2N6751 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
8825 2N6751 Silicon NPN Power Transistors TO-3 package Savantic
8826 2N6752 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
8827 2N6752 Silicon NPN Power Transistors TO-3 package Savantic
8828 2N6753 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
8829 2N6753 Silicon NPN Power Transistors TO-3 package Savantic
8830 2N6754 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
8831 2N6754 Silicon NPN Power Transistors TO-3 package Savantic
8832 2N6755 N-Channel Power MOSFETs/ 14 A/ 60 A/100 V Fairchild Semiconductor
8833 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
8834 2N6756 N-Channel Power MOSFETs/ 14 A/ 60 A/100 V Fairchild Semiconductor
8835 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
8836 2N6756 MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A Siliconix
8837 2N6757 N-Channel Power MOSFETs/ 9A/ 150V/200V Fairchild Semiconductor
8838 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
8839 2N6758 N-Channel Power MOSFETs/ 9A/ 150V/200V Fairchild Semiconductor
8840 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
8841 2N6758 MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A Siliconix
8842 2N6759 N-Channel Power MOSFETs/ 5.5A/ 350V/400V Fairchild Semiconductor
8843 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
8844 2N6760 N-Channel Power MOSFETs/ 5.5A/ 350V/400V Fairchild Semiconductor
8845 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
8846 2N6760 MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A Siliconix
8847 2N6761 N-Channel Power MOSFETs/ 4.5A/ 450V/500V Fairchild Semiconductor
8848 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
8849 2N6762 N-Channel Power MOSFETs/ 4.5A/ 450V/500V Fairchild Semiconductor
8850 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State


Datasheets found :: 253594
Page: | 291 | 292 | 293 | 294 | 295 | 296 | 297 | 298 | 299 |



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